View HGTG20N100D2_351438.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HGTG20N100D2
May 1995
20A, 1000V N-Channel IGBT
Package
JEDEC STYLE TO-247
EMITTER COLLECTOR GATE
Features
* 34A, 1000V * Latch Free Operation * Typical Fall Time 520ns * High Input Impedance * Low Conduction Loss
Description
The HGTG20N100D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
PACKAGING AVAILABILITY PART NUMBER HGTG20N100D2 PACKAGE TO-247 BRAND G20N100D2
COLLECTOR (BOTTOM SIDE METAL)
Terminal Diagram
N-CHANNEL ENHANCEMENT MODE
C
G
E
Absolute Maximum Ratings
TC = +25oC, Unless Otherwise Specified HGTG20N100D2 1000 1000 34 20 100 20 30 100A at 0.8 BVCES 150 1.20 -55 to +150 260 3 15 UNITS V V A A A V V W W/oC oC oC s s
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage RGE = 1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at TC = +90oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (0.125 inch from case for 5 seconds) Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PEAK) = 600V, TC = +125oC, RGE = 25.
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number
2826.3
3-93
Specifications HGTG20N100D2
Electrical Specifications
TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Voltage SYMBOL BVCES ICES TEST CONDITIONS IC = 250mA, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V IC = IC90, VGE = 10V Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES VGEP QG(ON) IC = 500A, VCE = VGE VGE = 20V IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V TC = TC = TC = TC = +25oC +125oC +25oC +125oC MIN 1000 3.0 L = 50H, IC = IC90, RG = 25, VGE = 10V, TJ = +125oC, VCE = 0.8 BVCES TYP 3.1 2.9 3.3 3.2 4.5 7.1 120 163 100 150 500 520 3.7 100 150 410 520 3.7 0.7 MAX 250 1.0 3.8 3.6 4.1 4.0 6.0 250 160 212 650 680 530 680 0.83 UNITS V A mA V V V V V nA V nC nC ns ns ns ns mJ ns ns ns ns mJ
oC/W
TC = +25oC TC = +125oC TC = +25oC
Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Current Turn-On Delay Time Current Rise Time Current Turn-Off Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance
tD(ON)I tRI tD(OFF)I tFI WOFF tD(ON)I tRI tD(OFF)I tFI WOFF RJC
L = 50H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES
NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Typical Performance Curves
40 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250s DUTY CYCLE < 0.5%, VCE = 10V 30 80 70 60 50 40 30 20 10 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 VGE = 6.0V VGE = 7.0V VGE = 6.5V VGE = 7.5V PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = +25oC VGE = 15V VGE = 8.5V VGE = 8.0V
20
TC = +150oC TC = +25 C
o
10 TC = -40oC 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL)
FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL)
3-94
HGTG20N100D2 Typical Performance Curves (Continued)
2.5 35 ICE, DC COLLECTOR CURRENT (A) 30 25 VGE = 10V 20 15 10 0.5 5 0 +25 +50 +75 +100 +125 +150 TC , CASE TEMPERATURE (oC) 0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 40 tFI , FALL TIME (s) VGE = 15V 2.0 VCE = 800V, TJ = +150oC, VGE = 15V, RG = 25, L = 50H
1.5
1.0
FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE
6000 f = 1MHz 5000 C, CAPACITANCE (pF)
FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT
1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) RL = 29 IG(REF) = 1.8mA VCC = BVCES 750 GATEEMITTER VOLTAGE VGE = 10V VCC = BVCES 10 VGE, GATE-EMITTER VOLTAGE (V) 40
4000 CISS 3000 COSS 2000
500 0.75 BVCES 0.50 BVCES 250 0.25 BVCES 0.75 BVCES 0.50 BVCES 0.25 BVCES
5
1000 CRSS 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER VOLTAGE 0 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 0
FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE
FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260)
10
5 VCE(ON), SATURATION VOLTAGE (V) TJ = +150oC 4 VGE = 10V WOFF , TURN-OFF SWITCHING LOSS (mJ)
TJ = +150oC, VGE = 15V, RG = 25, L = 50H
VCE = 800V, VGE = 10V, 15V
3 VGE = 15V 2
1.0
VCE = 400V, VGE = 10V, 15V
1
0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 40
0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A)
FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT
FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT
3-95
HGTG20N100D2 Typical Performance Curves (Continued)
1.2 VGE = 15V, RG = 50 tD(OFF)I , TURN-OFF DELAY (s) 1.0 VGE = 10V, RG = 50 0.8 VGE = 15V, RG = 25 0.6 VGE = 10V, RG = 25 fOP , OPERATING FREQUENCY (kHz) TJ = +150oC VCE = 800V L = 50H 100 VCE = 400V fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RJC = 0.7oC/W 10 VCE = 800V
0.4
0.2 0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 40
TJ = +150oC, TC = +75oC, VGE = 15V RG = 25, L = 50H 1
1 10 100 ICE, COLLECTOR-EMITTER CURRENT (A) NOTE: PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION
FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT
ICE, COLLECTOR-EMITTER CURRENT (A) 40 VGE = 10V
FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE
TJ = +150oC 10
TJ = +25oC
1 1 2 3 4 5 VCE(ON), SATURATION VOLTAGE (V)
FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE
Test Circuit
L = 50H
1/RG = 1/RGEN + 1/RGE RGEN = 50
VCC 800V
+ -
20V 0V RGE = 50
FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT
3-96
HGTG20N100D2 Operating Frequency Information
Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF . The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VCE * ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 * WOFF. Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
3-97

▲Up To Search▲

Price & Availability of HGTG20N100D2

	To Download HGTG20N100D2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .